Advertisements
Advertisements
Question
Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.

Advertisements
Solution
Dynamic plate resistance, `r_p=((deltaV_p)/(deltaI_p)),` at constant grid voltage
We need to find the slope of the graph for a particular value of grid voltage, i.e. Vg = −6 V.
Consider two points for the plot of Vg = −6 V:-
\[r_p = \frac{(240 - 160) V}{(13 - 3) \times {10}^{- 3} A}\]
\[ r_p = \frac{80}{10} \times {10}^3 \Omega\]
\[ r_p = 8 K\Omega\]
\[ g_m = \left( \frac{\delta I_p}{\delta V_g} \right)_{V_P = \text{constant } (200 V)}\]
Consider two points on the 200 V line:-
\[g_m = \frac{(13 - 3) \times {10}^{- 3}}{[( - 4) - ( - 8)]}A\]
\[ g_m = \frac{10 \times {10}^{- 3}}{4}=2.5\text{ mili mho}\]
Amplification factor,
\[\mu = - \left( \frac{∆ V_P}{∆ V_G} \right)_{i_P =\text{ constant}}\]
\[\mu = - \frac{100 - 180}{- 6 - ( - 10)}\]
\[\mu = \frac{80}{4} = 20\]
APPEARS IN
RELATED QUESTIONS
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Explain the working of P-N junction diode in forward and reverse biased mode.
Draw its I – V characteristics of photodiode
Plot a graph showing variation of current versus voltage for the material GaAs ?
Show on a graph, the variation of resistivity with temperature for a typical semiconductor.
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Diffusion in a p-n junction is due to ______.
We use alloys for making standard resistors because they have ____________.
With reference to Semiconductor Physics,
Name the diode that emits spontaneous radiation when forward biased.
Of the diodes shown in the following diagrams, which one is reverse biased?
The current through an ideal PN-junction shown in the following circuit diagram will be:

In forward bias width of potential barrier in a p + n junction diode
On increasing the reverse biases voltage to a large value in a P – N junction diode-current
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
![]() (a) |
![]() (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

Differentiate between the threshold voltage and the breakdown voltage for a diode.


