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प्रश्न
With the help of a neat circuit diagram, explain the working of a photodiode.
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उत्तर

a. A photodiode is a special purpose P-N junction diode fabricated with a transparent window to allow light to fall on the diode.
b. When the photodiode is illuminated with light (photons) with energy h greater than the energy gap Eg of the semiconductor, then electron-hole pairs are generated due to the absorption of photons.
c. The diode is fabricated such that the generation of electron-hole pairs takes place in or near the depletion region of the diode.
d. Due to electric field of the junction, electrons and holes are separated before they recombine.
e. The direction of the electric field is such that electrons reach N-side and holes reach Pside. Electrons are collected on N-side and holes are collected on P-side giving rise to an e.m.f.
f. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light.
g. It is easier to observe the change in the current with change in the light intensity, if a reverse bias is applied. Thus, photodiode can be used as a photodetector to detect optical signals.
संबंधित प्रश्न
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Even though the current in the forward bias is known to be more than in the reverse bias, yet the photodiode works in reverse bias. What is the reason?
A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
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(c) Name the semiconductor device used in solar panels. Briefly explain with the help of a diagram, how this device works
Write briefly the important processes that occur during the formation of p−n junction. With the help of necessary diagrams, explain the term 'barrier potential'.
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Briefly explain its working. Draw its V - I characteristics for two different intensities of illumination ?
Draw V − I characteristics of a p-n junction diode. Answer the following questions, giving reasons:
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(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the breakdown region.
The current in the forward bias is known to be more (~mA) than the current in the reverse bias (~μA). What is the reason, then, to operate the photodiode in reverse bias?
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Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
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In Figure, assuming the diodes to be ideal ______.

If the resistance R1 is increased (Figure), how will the readings of the ammeter and voltmeter change?

Read the following paragraph and answer the questions.
|
LED is a heavily doped P-N junction which under forward bias emits spontaneous radiation. When it is forward-biased, due to recombination of holes and electrons at the junction, energy is released in the form of photons. In the case of Si and Ge diode, the energy released in recombination lies in the infrared region. LEDs that can emit red, yellow, orange, green and blue light are commercially available. The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV. The compound semiconductor Gallium Arsenide – Phosphide is used for making LEDs of different colours.
|
- Why are LEDs made of compound semiconductor and not of elemental semiconductors?
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- A student connects the blue coloured LED as shown in the figure. The LED did not glow when switch S is closed. Explain why?

OR
iii. Draw V-I characteristic of a p-n junction diode in
(i) forward bias and (ii) reverse bias
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Draw solar cells of I-V characteristics.
Draw the circuit diagram of an illuminated photodiode and its I-V characteristics.
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Identify the special purpose diodes 'A', 'B' and 'C' from the given symbols.

Select the wrong statement in the case of LED.

- For a solar-cell the I-V characteristics lies in the (IV) quadrant of the given graph.
- In a reverse biased p-n junction diode, the current measured in (μA), is due to majority charge carriers.

