Advertisements
Advertisements
प्रश्न
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
Advertisements
उत्तर
500 nm to 1000 nm
APPEARS IN
संबंधित प्रश्न
With the help of a neat circuit diagram, explain the working of a photodiode.
Colour of light emitted by LED depends upon__________________ .
- its forward bias
- its reverse bias
- the band gap of the material of semiconductor
- its size
Meeta's father was driving her to school. At the traffic signal, she noticed that each traffic light was made of many tiny lights instead of a single bulb. When Meeta asked this question to her father, he explained the reason for this.
Answer the following questions based on above information:
(i) What were the values displayed by Meeta and her father?
(ii) What answer did Meeta's father give?
(iii) What are the tiny lights in traffic signals called and how do these operate?
How is a Zener diode fabricated?
Explain with the help of a diagram, how depletion region and potential barrier are formed in a junction diode.
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is (i) forward biased
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is(ii) reveres biased?
With what considerations in view, a photodiode is fabricated? State its working with the help of a suitable diagram.
Even though the current in the forward bias is known to be more than in the reverse bias, yet the photodiode works in reverse bias. What is the reason?
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Forward biasing
How are these characteristics made use of in rectification?
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Reverse biasing
How are these characteristics made use of in rectification?
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
State its any ‘two’ uses of photodiode.
Describe, with the help of a circuit diagram, the working of a photodiode.
Sunil and his parents were travelling to their village in their car. On the way his mother noticed some grey coloured panels installed on the roof of a low building. She enquired from Sunil what those panels were and Sunil told his mother that those were solar panels.
(a) What were the values displayed by Sunil and his mother? State one value for each.
(b) In what way would the use of solar panels prove to be very useful?
(c) Name the semiconductor device used in solar panels. Briefly explain with the help of a diagram, how this device works
Write briefly the important processes that occur during the formation of p−n junction. With the help of necessary diagrams, explain the term 'barrier potential'.
Why is zener diode fabricated by heavily doping both p- and n-sides of the junction?
How is a photodiode fabricated?
Draw the circuit diagram of a full wave rectifier using p-n junction diode.
Explain its working and show the output, input waveforms.
Describe briefly, with the help of a diagram, the role of the two important processes involved in the formation of a p-n junction.
What happens to the width of depletion player of a p-n junction when it is (i) forward biased, (ii) reverse biased?
An ideal diode should pass a current freely in one direction and should stop it completely in the opposite direction. Which is closer to ideal-vacuum diode or a p-njunction diode?
The plate resistance of a triode is 8 kΩ and the transconductance is 2.5 millimho. (a) If the plate voltage is increased by 48 V and the grid voltage is kept constant, what will be the increase in the plate current? (b) With plate voltage kept constant at this increased value, by how much should the grid voltage be decreased in order to bring the plate current back to its initial value?
Explain how a potential barrier is developed in a p-n junction diode.
Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
Draw the V-I characteristics of an LED. State two advantages of LED lamps over convertional incandescent lamps.
The wavelength and intensity of light emitted by a LED depend upon ______.
Draw solar cell V-I characteristics.
Explain photodiode.
What is the magnitude of the potential barrier across a Ge p-n junction?
Name the device which converts the change in intensity of illumination to change in electric current flowing through it. Plot I-V characteristics of this device for different intensities. State any two applications of this device.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______.
Consider the following statements (A) and (B) and identify the correct answer.
- A Zener diode is connected in reverse bias when used as a voltage regulator.
- The potential barrier of the p-n junction lies between 0.1 V to 0.3 V.
In Figure, assuming the diodes to be ideal ______.

Draw solar cells of I-V characteristics.
How can a photodiode be used to measure light intensity?

- For a solar-cell the I-V characteristics lies in the (IV) quadrant of the given graph.
- In a reverse biased p-n junction diode, the current measured in (μA), is due to majority charge carriers.
