Advertisements
Advertisements
प्रश्न
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
Advertisements
उत्तर
500 nm to 1000 nm
APPEARS IN
संबंधित प्रश्न
Colour of light emitted by LED depends upon__________________ .
- its forward bias
- its reverse bias
- the band gap of the material of semiconductor
- its size
Meeta's father was driving her to school. At the traffic signal, she noticed that each traffic light was made of many tiny lights instead of a single bulb. When Meeta asked this question to her father, he explained the reason for this.
Answer the following questions based on above information:
(i) What were the values displayed by Meeta and her father?
(ii) What answer did Meeta's father give?
(iii) What are the tiny lights in traffic signals called and how do these operate?
How is a Zener diode fabricated?
Explain with the help of a diagram, how depletion region and potential barrier are formed in a junction diode.
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is (i) forward biased
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Forward biasing
How are these characteristics made use of in rectification?
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Reverse biasing
How are these characteristics made use of in rectification?
A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?
State its any ‘two’ uses of photodiode.
Describe, with the help of a circuit diagram, the working of a photodiode.
Why is zener diode fabricated by heavily doping both p- and n-sides of the junction?
How is a photodiode fabricated?
Briefly explain its working. Draw its V - I characteristics for two different intensities of illumination ?
Draw V − I characteristics of a p-n junction diode. Answer the following questions, giving reasons:
(i) Why is the current under reverse bias almost independent of the applied potential up to a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the breakdown region.
The current in the forward bias is known to be more (~mA) than the current in the reverse bias (~μA). What is the reason, then, to operate the photodiode in reverse bias?
Draw the circuit diagram of a full wave rectifier using p-n junction diode.
Explain its working and show the output, input waveforms.
Show the output waveforms (Y) for the following inputs A and B of (i) OR gate (ii) NAND gate ?

How does a light emitting diode (LED) work? Give two advantages of LED’s over the conventional incandescent lamps.
Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure light intensity?
Explain the formation of depletion layer and potential barrier in a p−n junction.
An ideal diode should pass a current freely in one direction and should stop it completely in the opposite direction. Which is closer to ideal-vacuum diode or a p-njunction diode?
The plate resistance of a triode is 8 kΩ and the transconductance is 2.5 millimho. (a) If the plate voltage is increased by 48 V and the grid voltage is kept constant, what will be the increase in the plate current? (b) With plate voltage kept constant at this increased value, by how much should the grid voltage be decreased in order to bring the plate current back to its initial value?
Explain how a potential barrier is developed in a p-n junction diode.
Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
Draw the V-I characteristics of an LED. State two advantages of LED lamps over convertional incandescent lamps.
The wavelength and intensity of light emitted by a LED depend upon ______.
What is a solar cell?
Explain the three processes involved in the working of a solar cell.
What is the magnitude of the potential barrier across a Ge p-n junction?
Pressure P varies as P = `alpha/beta "exp" (- (alpha x)/"k"_"BT")`, where x denotes the distance, kB is the Boltzmann's constant, T is the absolute temperature and α and β are constant. The dimension of β is ______.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______.
For LED's to emit light in visible region of electromagnetic light, it should have energy band gap in the range of:
Which one of the following is not the advantage of LED?
In Figure, assuming the diodes to be ideal ______.

If the resistance R1 is increased (Figure), how will the readings of the ammeter and voltmeter change?

Why a photo-diode is operated in reverse bias whereas the current in the forward bias is much larger than that in the reverse bias? Explain. Mention its two uses.
Draw solar cells of I-V characteristics.
Draw the circuit diagram of an illuminated photodiode and its I-V characteristics.
How can a photodiode be used to measure light intensity?
The value of power dissipated across the Zener diode (Vz = 15 V) connected in the circuit as shown in the figure is x × 10–1 watt. The value of x, to the nearest integer, is ______.

What energy conversion takes place in a solar cell?
Select the wrong statement in the case of LED.

- For a solar-cell the I-V characteristics lies in the (IV) quadrant of the given graph.
- In a reverse biased p-n junction diode, the current measured in (μA), is due to majority charge carriers.
