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प्रश्न
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
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उत्तर
500 nm to 1000 nm
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संबंधित प्रश्न
With the help of a neat circuit diagram, explain the working of a photodiode.
Colour of light emitted by LED depends upon__________________ .
- its forward bias
- its reverse bias
- the band gap of the material of semiconductor
- its size
State its any ‘two’ uses of photodiode.
Describe, with the help of a circuit diagram, the working of a photodiode.
Sunil and his parents were travelling to their village in their car. On the way his mother noticed some grey coloured panels installed on the roof of a low building. She enquired from Sunil what those panels were and Sunil told his mother that those were solar panels.
(a) What were the values displayed by Sunil and his mother? State one value for each.
(b) In what way would the use of solar panels prove to be very useful?
(c) Name the semiconductor device used in solar panels. Briefly explain with the help of a diagram, how this device works
How is a photodiode fabricated?
Briefly explain its working. Draw its V - I characteristics for two different intensities of illumination ?
The current in the forward bias is known to be more (~mA) than the current in the reverse bias (~μA). What is the reason, then, to operate the photodiode in reverse bias?
How does a light emitting diode (LED) work? Give two advantages of LED’s over the conventional incandescent lamps.
Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure light intensity?
Explain the formation of depletion layer and potential barrier in a p−n junction.
An ideal diode should pass a current freely in one direction and should stop it completely in the opposite direction. Which is closer to ideal-vacuum diode or a p-njunction diode?
The plate resistance of a triode is 8 kΩ and the transconductance is 2.5 millimho. (a) If the plate voltage is increased by 48 V and the grid voltage is kept constant, what will be the increase in the plate current? (b) With plate voltage kept constant at this increased value, by how much should the grid voltage be decreased in order to bring the plate current back to its initial value?
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of the band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
What is a solar cell?
With reference to Semiconductor Physics,
Name the process that causes depletion region in a p-n junction.
Explain photodiode.
Name the device which converts the change in intensity of illumination to change in electric current flowing through it. Plot I-V characteristics of this device for different intensities. State any two applications of this device.
Consider the following statements (A) and (B) and identify the correct answer.
- A Zener diode is connected in reverse bias when used as a voltage regulator.
- The potential barrier of the p-n junction lies between 0.1 V to 0.3 V.
If the resistance R1 is increased (Figure), how will the readings of the ammeter and voltmeter change?
Read the following paragraph and answer the questions.
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LED is a heavily doped P-N junction which under forward bias emits spontaneous radiation. When it is forward-biased, due to recombination of holes and electrons at the junction, energy is released in the form of photons. In the case of Si and Ge diode, the energy released in recombination lies in the infrared region. LEDs that can emit red, yellow, orange, green and blue light are commercially available. The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV. The compound semiconductor Gallium Arsenide – Phosphide is used for making LEDs of different colours.
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- Why are LEDs made of compound semiconductor and not of elemental semiconductors?
- What should be the order of bandgap of an LED, if it is required to emit light in the visible range?
- A student connects the blue coloured LED as shown in the figure. The LED did not glow when switch S is closed. Explain why?
OR
iii. Draw V-I characteristic of a p-n junction diode in
(i) forward bias and (ii) reverse bias
Why a photo-diode is operated in reverse bias whereas the current in the forward bias is much larger than that in the reverse bias? Explain. Mention its two uses.
Briefly explain how emf is generated in a solar cell.
Draw solar cells of I-V characteristics.
Draw the circuit diagram of an illuminated photodiode and its I-V characteristics.
How can a photodiode be used to measure light intensity?
