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प्रश्न
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Forward biasing
How are these characteristics made use of in rectification?
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उत्तर
p-n junction diode under forward bias
p-side is connected to the positive terminal and n-side to the negative terminal.
Applied voltage drops across the depletion region.
Electron in n-region moves towards the p-n junction and holes in the p-region move towards the junction. The width of the depletion layer decreases and hence, it offers less resistance.
Diffusion of majority carriers takes place across the junction. This leads to the forward current.
The V-I characteristics of p-n junction in forward bias is shown below:
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संबंधित प्रश्न
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Reverse biasing
How are these characteristics made use of in rectification?
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure light intensity?
Draw solar cell V-I characteristics.
With reference to Semiconductor Physics,
Name the process that causes depletion region in a p-n junction.
Pressure P varies as P = `alpha/beta "exp" (- (alpha x)/"k"_"BT")`, where x denotes the distance, kB is the Boltzmann's constant, T is the absolute temperature and α and β are constant. The dimension of β is ______.
Which one of the following is not the advantage of LED?
Why a photo-diode is operated in reverse bias whereas the current in the forward bias is much larger than that in the reverse bias? Explain. Mention its two uses.
How can a photodiode be used to measure light intensity?
What energy conversion takes place in a solar cell?
