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Question
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Forward biasing
How are these characteristics made use of in rectification?
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Solution
p-n junction diode under forward bias
p-side is connected to the positive terminal and n-side to the negative terminal.
Applied voltage drops across the depletion region.
Electron in n-region moves towards the p-n junction and holes in the p-region move towards the junction. The width of the depletion layer decreases and hence, it offers less resistance.
Diffusion of majority carriers takes place across the junction. This leads to the forward current.
The V-I characteristics of p-n junction in forward bias is shown below:
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