The wavelength (or colour) of light emitted by an LED depends on the energy gap of the semiconductor material. The intensity of light depends on the forward bias current; a higher forward current produces greater light intensity.
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प्रश्न
The wavelength and intensity of light emitted by a LED depend upon ______.
विकल्प
forward bias and energy gap of the semiconductor.
energy gap of the semiconductor and reverse bias.
energy gap only.
forward bias only.
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उत्तर
The wavelength and intensity of light emitted by a LED depend upon energy gap of the semiconductor and reverse bias.
Explanation:
संबंधित प्रश्न
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
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Explain its working and show the output, input waveforms.
Explain the formation of depletion layer and potential barrier in a p−n junction.
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Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______.
In Figure, assuming the diodes to be ideal ______.

Briefly explain how emf is generated in a solar cell.
What energy conversion takes place in a solar cell?
