Advertisements
Advertisements
Question
Differentiate between the threshold voltage and the breakdown voltage for a diode.
Advertisements
Solution
| Threshold voltage | Breakdown voltage | |
| (i) | The forward voltage at which the current through the p-n junction starts increasing rapidly is known as the threshold voltage. | Reverse voltage at which the p-n junction breakdown occurs is called the breakdown voltage. |
| (ii) | The magnitude of this voltage is lower than the breakdown voltage. | The magnitude of this voltage is higher than the threshold voltage. |
APPEARS IN
RELATED QUESTIONS
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.
Diffusion in a p-n junction is due to ______.
In forward bias width of potential barrier in a p + n junction diode
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer
| ‘A’ | ‘B’ | ‘C’ |
![]() |
![]() |
![]() |
Choose the correct circuit which can achieve the bridge balance.



