Advertisements
Advertisements
प्रश्न
Draw the circuit diagram to study the characteristic of the transistor in common emitter mode. Draw the input and output characteristics.
Advertisements
उत्तर
- Circuit to study Common Emitter (CE) characteristic:

- The Input characteristics:

- The output characteristics:
APPEARS IN
संबंधित प्रश्न
Why are the emitter, the base, and the collector of a BJT doped differently?
In a common-base connection, a certain transistor has an emitter current of 10mA and a collector current of 9.8 mA. Calculate the value of the base current.
In a common-base connection, the emitter current is 6.28 mA and the collector current is 6.20 mA. Determine the common-base DC current gain.
With the help of a neat diagram, explain the working of the npn transistor?
With the help of a neat circuit diagram, explain the transistor as an amplifier?
The principle based on which a solar cell operates is ____________.
Give the Barkhausen conditions for sustained oscillations.
Explain the need for a feedback circuit in a transistor oscillator.
Transistor functions as a switch. Explain.
Assuming VCEsat = 0.2 V and β = 50, find the minimum base current (IB) required to drive the transistor given in the figure to saturation.

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, calculate the emitter-collector voltage VEC (in volts).

In a common emitter amplifier, the input resistance is 1000 Ω, the peak value of Input signal voltage is 5 mV, and β = 60. The peak value of output current is
The condition to convert an amplified signal into an oscillating signal is ______
If l1, l2, l3 are the lengths of the emitter, base and collector of a transistor, then ____________.
Least doped region in a transistor ____________.
In switching circuit, transistor is in ON state. Values of IC and IB are 5.2 mA and 10 µA respectively and value of RC is 1 k`Omega`. If Vcc is at 5.5 V, then VCE is ______.
ln switching circuit, transistor is in ON state and values of IC and IB are 4.2 mA and 5 µA respectively and RC= l k`Omega` and RB= 300 k`Omega`. If VBE = 0.5 V, find the value of VBB.
A change of 9.0 mA in the emitter current brings a change of 8.9 mA in the collector current. The value of current gain β will be ______.
In common emitter amplifier, a change of 0.2 mA in the base current causes a change of 5 mA in the collector current. If input resistance is 2K `Omega` and voltage gain is 75, the load resistance used in the circuit is ______.
A transistor having α = 0.8 is connected in a common emitter configuration. When the base current changes by 6 mA, the change in collector current is ______
A conducting wire has length 'L1' and diameter 'd1'. After stretching the same wire length becomes 'L2' and diameter 'd2' The ratio of resistances before and after stretching is ______.
A common emitter amplifier circuit built using an n-p-n transistor is shown in the figure. Its DC current gain is 300, RC = 4 kΩ and VCC = 20 V. What is the minimum base current for VCE to reach saturation?
The base current in common emitter mode of the transistor changes by 10 µA. If the current gain of the transistor is 50, then change in collector current is ______.
Define α.
In a transistor (common emitter configuration) the ratio of power gain to voltage gain is (α and β are current ratios) ______.
