Advertisements
Advertisements
Question
What is meant by doping of an intrinsic semiconductor?
Advertisements
Solution
The mixing of a small amount of pentavalent (e.g. phosphorus) or trivalent (e.g. aluminium) substance as an impurity in a pure semiconductor (e.g., Ge, Si) is called doping.
APPEARS IN
RELATED QUESTIONS
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Let nh and ne be the number of holes and conduction electrons respectively in a semiconductor. Then ______.
In a semiconductor, the number of holes and number of free electrons are represented as 'nh' and 'ne' respectively. Which one of the following statements is TRUE for the semiconductor?
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
Hole is ______.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Why is doping of intrinsic semiconductors necessary?
Name the two types of atoms used for doping of Ge/Si.
Answer the following giving reasons:
Impurities are added to intrinsic semiconductors.
- Assertion (A): The resistance of an intrinsic semiconductor decreases with an increase in its temperature.
- Reason (R): The number of conduction electrons as well as hole increase in an intrinsic semiconductor with the rise in its temperature.
Identify the WRONG statement from the following. In an intrinsic semiconductor ______.
