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प्रश्न
What is meant by doping of an intrinsic semiconductor?
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उत्तर
The mixing of a small amount of pentavalent (e.g. phosphorus) or trivalent (e.g. aluminium) substance as an impurity in a pure semiconductor (e.g., Ge, Si) is called doping.
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संबंधित प्रश्न
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Explain the following term:
Intrinsic semiconductor
Hole is ______.
Name the two types of atoms used for doping of Ge/Si.
Why does a pure semiconductor behave almost like an insulator at very low temperatures?
What happens when some valence electrons gain enough energy as temperature increases?
What first enables a valence electron to move to the conduction band?
Which pairing correctly identifies examples of intrinsic and extrinsic semiconductors?
What does a classroom in which every student is seated represent in the description of a semiconductor at very low temperature?
Why are pure semiconductors not usually used directly in most electronic devices?
