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प्रश्न
What is meant by doping of an intrinsic semiconductor?
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उत्तर
The mixing of a small amount of pentavalent (e.g. phosphorus) or trivalent (e.g. aluminium) substance as an impurity in a pure semiconductor (e.g., Ge, Si) is called doping.
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संबंधित प्रश्न
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Let nh and ne be the number of holes and conduction electrons respectively in a semiconductor. Then ______.
In a semiconductor, the number of holes and number of free electrons are represented as 'nh' and 'ne' respectively. Which one of the following statements is TRUE for the semiconductor?
In a pure or intrinsic semiconductor, valence band holes and conduction-band electrons are always ______.
Explain the following term:
Intrinsic semiconductor
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
Hole is ______.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Why is doping of intrinsic semiconductors necessary?
A pure semiconductor has equal electron and hole concentration of 1016 m-3. Doping by indium increases nh to 5 × 1022 m-3. Then, the value of ne in the doped semiconductor is ______.
Identify the WRONG statement from the following. In an intrinsic semiconductor ______.
