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प्रश्न
What is meant by doping of an intrinsic semiconductor?
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उत्तर
The mixing of a small amount of pentavalent (e.g. phosphorus) or trivalent (e.g. aluminium) substance as an impurity in a pure semiconductor (e.g., Ge, Si) is called doping.
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संबंधित प्रश्न
Answer in detail.
Distinguish between intrinsic semiconductors and extrinsic semiconductors.
Let nh and ne be the number of holes and conduction electrons respectively in a semiconductor. Then ______.
Explain the following term:
Intrinsic semiconductor
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
Hole is ______.
Name the two types of atoms used for doping of Ge/Si.
A pure semiconductor has equal electron and hole concentration of 1016 m-3. Doping by indium increases nh to 5 × 1022 m-3. Then, the value of ne in the doped semiconductor is ______.
Answer the following giving reasons:
Impurities are added to intrinsic semiconductors.
- Assertion (A): The resistance of an intrinsic semiconductor decreases with an increase in its temperature.
- Reason (R): The number of conduction electrons as well as hole increase in an intrinsic semiconductor with the rise in its temperature.
Identify the WRONG statement from the following. In an intrinsic semiconductor ______.
