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प्रश्न
Name the two types of atoms used for doping of Ge/Si.
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उत्तर
Doping increases the conductivity of a semiconductor.
For doping pure Si, Ge, and pentavalent phosphorus is used to convert it to the n-type semiconductor.
Trivalent aluminium is used to convert pure Si, and Ge to the p-type semiconductor.
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संबंधित प्रश्न
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Let np and ne be the numbers of holes and conduction electrons in an extrinsic semiconductor.
Explain the following term:
Intrinsic semiconductor
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
- Assertion (A): The resistance of an intrinsic semiconductor decreases with an increase in its temperature.
- Reason (R): The number of conduction electrons as well as hole increase in an intrinsic semiconductor with the rise in its temperature.
What happens when some valence electrons gain enough energy as temperature increases?
Which relation gives the electron concentration, hole concentration, and intrinsic carrier concentration in an intrinsic semiconductor?
How does the conductivity of an intrinsic semiconductor compare with that of an extrinsic semiconductor?
Which pairing correctly identifies examples of intrinsic and extrinsic semiconductors?
Why are pure semiconductors not usually used directly in most electronic devices?
