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प्रश्न
Name the device which converts the change in intensity of illumination to change in electric current flowing through it. Plot I-V characteristics of this device for different intensities. State any two applications of this device.
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उत्तर
Photodiodes are used to detect optical signals of different intensities by changing current flowing through them.

I-V Characteristics of a photodiode
Applications of photodiodes:
- In detection of optical signals.
- In demodulation of optical signals.
- In light operated switches.
- In speed reading of computer punched cards.
- In electronic counters.
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संबंधित प्रश्न
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is(ii) reveres biased?
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
Describe, with the help of a circuit diagram, the working of a photodiode.
Briefly explain its working. Draw its V - I characteristics for two different intensities of illumination ?
The current in the forward bias is known to be more (~mA) than the current in the reverse bias (~μA). What is the reason, then, to operate the photodiode in reverse bias?
Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
Draw the V-I characteristics of an LED. State two advantages of LED lamps over convertional incandescent lamps.
With reference to Semiconductor Physics,
Name the process that causes depletion region in a p-n junction.
Consider the following statements (A) and (B) and identify the correct answer.
- A Zener diode is connected in reverse bias when used as a voltage regulator.
- The potential barrier of the p-n junction lies between 0.1 V to 0.3 V.

- For a solar-cell the I-V characteristics lies in the (IV) quadrant of the given graph.
- In a reverse biased p-n junction diode, the current measured in (μA), is due to majority charge carriers.
