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Science (English Medium) इयत्ता १२ - CBSE Question Bank Solutions for Physics

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Physics
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Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

A point P lies at a distance x from the midpoint of an electric dipole on its axis. The electric potential at point P is proportional to ______.

[2] Electrostatic Potential and Capacitance
Chapter: [2] Electrostatic Potential and Capacitance
Concept: undefined >> undefined

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Which one of the following metals does not exhibit emission of electrons from its surface when irradiated by visible light?

[11] Dual Nature of Radiation and Matter
Chapter: [11] Dual Nature of Radiation and Matter
Concept: undefined >> undefined

In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Define relaxation time.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Derive an expression for resistivity of a conductor in terms of the number density of charge carriers in the conductor and relaxation time.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

A resistor of 50 Ω, a capacitor of `(25/pi)` µF and an inductor of `(4/pi)` H are connected in series across an ac source whose voltage (in volts) is given by V = 70 sin (100 πt). Calculate:

  1. the net reactance of the circuit
  2. the impedance of the circuit
  3. the effective value of current in the circuit.
[7] Alternating Current
Chapter: [7] Alternating Current
Concept: undefined >> undefined

The potential difference applied across a given conductor is doubled. How will this affect (i) the mobility of electrons and (ii) the current density in the conductor? Justify your answers.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Explain how free electrons in a metal at constant temperature attain an average velocity under the action of an electric field. Hence, obtain an expression for it.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Consider two conducting wires A and B of the same diameter but made of different materials joined in series across a battery. The number density of electrons in A is 1.5 times that in B. Find the ratio of the drift velocity of electrons in wire A to that in wire B.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

A potential difference (V) is applied across a conductor of length 'L' and cross-sectional area 'A'.

How will the drift velocity of electrons and the current density be affected if another identical conductor of the same material were connected in series with the first conductor? Justify your answers.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Two conductors, made of the same material have equal lengths but different cross-sectional areas A1 and A2 (A1 > A2). They are connected in parallel across a cell. Show that the drift velocities of electrons in two conductors are equal.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined
  • Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
  • Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Why are microwaves considered suitable for radar systems used in aircraft navigation?

[8] Electromagnetic Waves
Chapter: [8] Electromagnetic Waves
Concept: undefined >> undefined

Define 'quality factor' of resonance in a series LCR circuit. What is its SI unit?

[7] Alternating Current
Chapter: [7] Alternating Current
Concept: undefined >> undefined

Define modulation index.

[15] Communication Systems
Chapter: [15] Communication Systems
Concept: undefined >> undefined

In a series LCR circuit connected to an a.c. source of voltage v = vmsinωt, use phasor diagram to derive an expression for the current in the circuit. Hence, obtain the expression for the power dissipated in the circuit. Show that power dissipated at resonance is maximum

[7] Alternating Current
Chapter: [7] Alternating Current
Concept: undefined >> undefined

In a series LCR circuit, VL = VC ≠ VR. What is the value of power factor?

[7] Alternating Current
Chapter: [7] Alternating Current
Concept: undefined >> undefined

State three important factors showing the need for translating a low frequency signal into a high frequency wave before transmission

[15] Communication Systems
Chapter: [15] Communication Systems
Concept: undefined >> undefined
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