Advertisements
Advertisements
प्रश्न
Why is the base of a transistor made thin and is lightly doped?
Advertisements
उत्तर
The base of a transistor is lightly doped than the emitter and narrowed so that almost all electrons injected from the emitter (in a n-p-n transistor) diffuse right across the base to the collector junction without recombining with holes. In other words, the base width is kept smaller than the recombination distance. In addition, to improve emitter efficiency and common-base current gain α, the emitter is much more heavily doped than the base.
APPEARS IN
संबंधित प्रश्न
Why are the emitter, the base, and the collector of a BJT doped differently?
Draw the circuit symbol of the PNP transistor.
For a transistor IC = 15 mA, IB = 0.5 mA. What is the current amplification factor?
With the help of a neat diagram, explain the working of the npn transistor?
The light emitted in an LED is due to
Explain the need for a feedback circuit in a transistor oscillator.
Assuming VCEsat = 0.2 V and β = 50, find the minimum base current (IB) required to drive the transistor given in the figure to saturation.

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, calculate the emitter-collector voltage VEC (in volts).

In the study of transistor as an amplifier, the ratio of collector current to emitter current is 0.98 then the ratio of collector current to base current will be ______.
ln switching circuit, transistor is in ON state and values of IC and IB are 4.2 mA and 5 µA respectively and RC= l k`Omega` and RB= 300 k`Omega`. If VBE = 0.5 V, find the value of VBB.
In case of npn transistors, the collector current is always less than the emitter current because ______.
In an npn transistor circuit, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, the emitter current (IE) and base current (IB) are given by ____________.
In a silicon transistor, a change of 7.89 mA in the emitter current if produces a change of 7.8 mA in the collector current, then the base current must change by ____________.
In a transistor, a change of 8.0 mA in the emitter current produces a change of 7.8 mA in the collector current. Then change in the base current is ____________.
In a transistor, doping level in base is increased slightly, the collector current and base current respectively ______.
In transistor amplifier, base-emitter junction is forward biased and collector emitter junction is reverse biased. The current gain is ______.
In the case of transistor, the relation between current ratios αdc and βdc is ______.
In common emitter mode of transistor, the d.c. current gain is 20, the emitter current is 7 mA. The collector current is ______.
A transistor is connected in C - E mode. If collector current is 72 × 10-5 A and α = 0.96, then base current will be ______.
In common emitter amplifier, a change of 0.2 mA in the base current causes a change of 5 mA in the collector current. If input resistance is 2K `Omega` and voltage gain is 75, the load resistance used in the circuit is ______.
A transistor having α = 0.8 is connected in a common emitter configuration. When the base current changes by 6 mA, the change in collector current is ______
A transistor is used as a common emitter amplifier with a load resistance 2 KΩ. The input resistance is 150 Ω. Base current is changed by 20 µA which results in a change in collector current by 1.5 mA. The voltage gain of the amplifier is ______.
The base current in common emitter mode of the transistor changes by 10 µA. If the current gain of the transistor is 50, then change in collector current is ______.
Define peak value of alternating signal.
Define α.
In a transistor (common emitter configuration) the ratio of power gain to voltage gain is (α and β are current ratios) ______.
