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Science (English Medium) Class 12 - CBSE Question Bank Solutions for Physics

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A current of 0.8 A flows in a conductor of 40 Ω for 1 minute. The heat produced in the conductor will be ______.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Answer the following giving reasons:

Impurities are added to intrinsic semiconductors.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

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  • Assertion (A): The resistance of an intrinsic semiconductor decreases with an increase in its temperature.
  • Reason (R): The number of conduction electrons as well as hole increase in an intrinsic semiconductor with the rise in its temperature.
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
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An ideal inductor is connected across an AC source of voltage. The current in the circuit ______.

[7] Alternating Current
Chapter: [7] Alternating Current
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What is the ratio of inductive and capacitive reactance in an ac circuit?

[7] Alternating Current
Chapter: [7] Alternating Current
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In a coil of resistance 100 Ω a current is induced by changing the magnetic flux through it. The variation of current with time is shown in the figure. The magnitude of change in flux through the coil is ______.

 

[6] Electromagnetic Induction
Chapter: [6] Electromagnetic Induction
Concept: undefined >> undefined

Using Huygens’s construction of secondary wavelets draw a diagram showing the passage of a plane wavefront from a denser to a rarer medium. Using it verifies Snell’s law.

[10] Wave Optics
Chapter: [10] Wave Optics
Concept: undefined >> undefined

Define the term drift velocity.

[3] Current Electricity
Chapter: [3] Current Electricity
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Derive an expression for  drift velocity of free electrons.

[3] Current Electricity
Chapter: [3] Current Electricity
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What is its relation with relaxation time?

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Write its (‘mobility’ of charge carriers) S.I. unit

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Distinguish between 'intrinsic' and 'extrinsic' semiconductors

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 2.5 × 10−7 m2 carrying a current of 1.8 A. Assume the density of conduction electrons to be 9 × 1028 m−3.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 1.0 × 10−7 m2 carrying a current of 1.5 A. Assume the density of conduction electrons to be 9 × 1028 m−3

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 2·5 × 10−7 m2 carrying a current of 2·7 A. Assume the density of conduction electrons to be 9 × 1028 m−3

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

Two charges 5 × 10−8 C and −3 × 10−8 C are located 16 cm apart. At what point(s) on the line joining the two charges is the electric potential zero? Take the potential at infinity to be zero.

[2] Electrostatic Potential and Capacitance
Chapter: [2] Electrostatic Potential and Capacitance
Concept: undefined >> undefined

The number density of free electrons in a copper conductor is 8.5 × 1028 m−3. How long does an electron take to drift from one end of a wire 3.0 m long to its other end? The area of cross-section of the wire is 2.0 × 10−6 m2 and it is carrying a current of 3.0 A.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

In a p-type semiconductos, which of the following statement is true:

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

How does drift velocity of electrons in a metallic conductor vary with increase in temperature? Explain.

[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined
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