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Tamil Nadu Board of Secondary EducationHSC Science Class 12

Revision: Electronics and Communication Physics HSC Science Class 12 Tamil Nadu Board of Secondary Education

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Definitions [11]

Define barrier potential.

The potential difference required to move the electrons through the electric field is called the barrier potential. The barrier potential of a P-N junction depends on the type of semiconductor material, the amount of doping and the temperature.

Define α.

The dc common-base current ratio or current gain (αdc) is defined as the ratio of the collector current (Ic) to emitter current. (Ig)

`alpha_"dc" = "I"_"C"/"I"_"E"`

Define β

The dc common-emitter current ratio or current gain (βdc) is defined as the ratio of the collector current (IC) to base current (IB).

`beta_"dc" = "I"_"C"/"I"_"B"`

Define peak value of alternating signal.

The maximum value of an alternating current or emf in either direction is known as the peak value.

Definition: Bipolar Junction Transistor

A junction transistor which is a semiconductor device having two junctions and three terminals, in which the current is carried by both electrons and holes (hence the name Bipolar), is called a Bipolar Junction Transistor.

Definition: CC Configuration

A transistor configuration in which the collector of the transistor is common to both the input and the output is called the Common Collector (CC) Configuration.

Definition: CE Configuration

A transistor configuration in which the emitter of the transistor is common to both the input and the output is called the Common Emitter (CE) Configuration.

Definition: CB Configuration

A transistor configuration in which the base of the transistor is common to both the input and the output is called the Common Base (CB) Configuration.

Definition: n-p-n Transistor

A transistor in which a p-type semiconductor (base) layer separates two layers of the n-type semiconductor (emitter and collector), and in whose circuit symbol the arrow is drawn from base pointing towards emitter, is called an n-p-n Transistor.

Definition: p-n-p Transistor

A transistor in which an n-type semiconductor (base) layer separates two layers of the p-type semiconductor (emitter and collector), and in whose circuit symbol the arrow is drawn from emitter pointing towards base, is called a p-n-p Transistor.

Define bandwidth of transmission system.

The range of frequencies required to transmit a piece of specified information in a particular channel is called channel bandwidth or the bandwidth of the transmission system.

Formulae [4]

Formula: AC Current Gain (α)

\[\alpha_{ac} = \dfrac{\Delta I_C}{\Delta I_E}\]

Formula: DC Current Gain (α)

αdc ​= \[\frac {I_C}{I_E}\]​ (value lies between 0.95 to 0.99)

Formula: AC Base Current Gain (β)

\[\beta_{ac} = \dfrac{\Delta I_C}{\Delta I_B}\]

Formula: DC Base Current Gain (β)

βdc ​= \[\frac {I_C}{​I_B}\]​​ (always > 1)

Key Points

Key Points: Transistor as an Amplifier (CE Configuration)
  1. For a transistor operating as an amplifier in CE configuration, the E-B junction is forward biased while the C-B junction is reverse biased.
  2. The AC current gain (βac) is the ratio of small change in collector current (ΔIC) to small change in base current (ΔIB) at constant VCE. The DC current gain (βdc) is the ratio of IC to IB, which is always greater than 1.
  3. The Voltage Gain (Av) is the ratio of change in output voltage (ΔVo) to change in input voltage (ΔVi). The Power Gain is the ratio of change in output power (ΔPo) to change in input power (ΔPi).
  4. In output characteristics, IC is independent of VCE as long as the collector-emitter junction is reverse biased. IC is large for large values of IB when VCE is constant.
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