Advertisements
Advertisements
Question
In semiconductors, thermal collisions are responsible for taking a valence electron to the conduction band. Why does the number of conduction electrons not go on increasing with time as thermal collisions continuously take place?
Advertisements
Solution
An electron jumps from the valence band to the conduction band only when it has gained sufficient energy. The thermal collisions sometimes do not provide sufficient energy to the electron to jump. Also, energy is lost in the form of heat because of the collision of the carriers with other charge carriers and atoms. Because of all these losses, only few electrons are left with sufficient energy to jump from the valence band to the conduction band. So, the population of electron in the conduction band does not keep on increasing with time.
APPEARS IN
RELATED QUESTIONS
Draw the necessary energy band diagrams to distinguish between conductors, semiconductors and insulators.
How does the change in temperature affect the behaviour of these materials ? Explain briefly.
Distinguish between a metal and an insulator on the basis of energy band diagrams ?
Write two characteristic features to distinguish between n-type and p-type semiconductors ?
What is the resistance of an intrinsic semiconductor at 0 K?
We have valence electrons and conduction electrons in a semiconductor. Do we also have 'valence holes' and 'conduction holes'?
A p-type semiconductor is
Two identical capacitors A and B are charged to the same potential V and are connected in two circuits at t = 0 as shown in figure. The charges on the capacitors at a time t = CRare, respectively,


An incomplete sentence about transistors is given below:
The emitter−..... junction is __ and the collector−..... junction is __. The appropriate words for the dotted empty positions are, respectively,
When a semiconducting material is doped with an impurity, new acceptor levels are created. In a particular thermal collision, a valence electron receives an energy equal to 2kT and just reaches one of the acceptor levels. Assuming that the energy of the electron was at the top edge of the valence band and that the temperature T is equal to 300 K, find the energy of the acceptor levels above the valence band.
Find the maximum wavelength of electromagnetic radiation which can create a hole-electron pair in germanium. The band gap in germanium is 0.65 eV.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Let ΔE denote the energy gap between the valence band and the conduction band. The population of conduction electrons (and of the holes) is roughly proportional to e−ΔE/2kT. Find the ratio of the concentration of conduction electrons in diamond to the in silicon at room temperature 300 K. ΔE for silicon is 1.1 eV and for diamond is 6.1 eV. How many conduction electrons are likely to be in one cubic metre of diamond?
Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7 × 1015 holes per cubic metre. Density of silicon 5 × 1028 atoms per cubic metre.
A semiconducting material has a band gap of 1 eV. Acceptor impurities are doped into it which create acceptor levels 1 meV above the valence band. Assume that the transition from one energy level to the other is almost forbidden if kT is less than 1/50 of the energy gap. Also if kT is more than twice the gap, the upper levels have maximum population. The temperature of the semiconductor is increased from 0 K. The concentration of the holes increases with temperature and after a certain temperature it becomes approximately constant. As the temperature is further increased, the hole concentration again starts increasing at a certain temperature. Find the order of the temperature range in which the hole concentration remains approximately constant.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
The energy of a hydrogen atom in the ground state is −13.6 eV. The energy of a He+ ion in the first excited state will be:
A hole in a. p – type semiconductor is
The reaction between α and β parameter of a transistor is given by
Draw the energy band diagrams for conductors, semiconductors and insulators. Which band determines the electrical conductivity of a solid? How is the electrical conductivity of a semiconductor affected with rise in its temperature? Explain.
The energy required by an electron to jump the forbidden band in silicon at room temperature is about ______.
Which one of the following elements will require the highest energy to take out an electron from them?
Pb, Ge, C and Si
