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In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.

  1. large velocity of the minority charge carriers if the doping concentration is small.
  2. large velocity of the minority charge carriers if the doping concentration is large.
  3. strong electric field in a depletion region if the doping concentration is small.
  4. strong electric field in the depletion region if the doping concentration is large.
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

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Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

The temperature (T) dependence of resistivity of materials A and material B is represented by fig (i) and fig (ii) respectively. Identify material A and material B.


fig. (i)

fig. (ii)
[3] Current Electricity
Chapter: [3] Current Electricity
Concept: undefined >> undefined

The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer

‘A’ ‘B’ ‘C’
[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Radiation of frequency 1015 Hz is incident on three photosensitive surfaces A, B and C. Following observations are recorded:

Surface A: no photoemission occurs

Surface B: photoemission occurs but the photoelectrons have zero kinetic energy.

Surface C: photo emission occurs and photoelectrons have some kinetic energy.
Using Einstein’s photo-electric equation, explain the three observations.

[11] Dual Nature of Radiation and Matter
Chapter: [11] Dual Nature of Radiation and Matter
Concept: undefined >> undefined

Two long straight parallel conductors carrying currents I1 and I2 are separated by a distance d. If the currents are flowing in the same direction, show how the magnetic field produced by one exerts an attractive force on the other. Obtain the expression for this force and hence define 1 ampere.

[4] Moving Charges and Magnetism
Chapter: [4] Moving Charges and Magnetism
Concept: undefined >> undefined

Draw V-I characteristics of a p-n Junction diode.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Differentiate between the threshold voltage and the breakdown voltage for a diode.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Write the property of a junction diode which makes it suitable for rectification of ac voltages.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Explain the formation of the barrier potential in a p-n junction.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined

Beams of electrons and protons move parallel to each other in the same direction. They ______.

[4] Moving Charges and Magnetism
Chapter: [4] Moving Charges and Magnetism
Concept: undefined >> undefined

A hydrogen atom makes a transition from n = 5 to n = 1 orbit. The wavelength of photon emitted is λ. The wavelength of photon emitted when it makes a transition from n = 5 to n = 2 orbit is ______.

[12] Atoms
Chapter: [12] Atoms
Concept: undefined >> undefined
  • Assertion (A): Work done in moving a charge around a closed path, in an electric field is always zero.
  • Reason (R): Electrostatic force is a conservative force.
[2] Electrostatic Potential and Capacitance
Chapter: [2] Electrostatic Potential and Capacitance
Concept: undefined >> undefined

Answer the following giving reasons:

A p-n junction diode is damaged by a strong current.

[14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Chapter: [14] Semiconductor Electronics - Materials, Devices and Simple Circuits
Concept: undefined >> undefined
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CBSE Science (English Medium) इयत्ता १२ Question Bank Solutions
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