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प्रश्न
Classify each of the following as being either a p-type or a n-type semiconductor:
- Ge doped with In
- B doped with Si
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उत्तर १
| p-type semiconductor | n-type semiconductor |
| Ge doped with | B doped with Si |
उत्तर २
- While In is a group 13 element, Ge is a group 14 element. When Ge is doped with In, the doped material will behave as a p-type semiconductor and electron-deficient holes will be formed in the lattice.
- Si is an element in group 14, whereas B is an element in group 13. The doped material will function as an n-type semiconductor and conduct electricity using the standard electron conduction method.
संबंधित प्रश्न
A group 14 element is to be converted into n-type semiconductor by doping it with a suitable impurity. To which group should this impurity belong?
What is a semiconductor?
Describe the two main types of semiconductors and contrast their conduction mechanism.
Explain the following with suitable examples:
12-16 group compounds
What type of semiconductor is obtained when
Ge is doped with In?
What type of semiconductor is obtained when
Si is doped with P?
Solids with conductivities ranging from 104 to 107 ohm-1 m-1 are ____________.
The process by which impurity is introduced in semiconductors to enhance its conductivity is known as ____________.
Electrical conductivity of semiconductors increases with increase in ____________.
Which kind of defects are introduced by doping?
Silicon doped with electron-rich impurity forms ______.
Which of the following statements are true about semiconductors?
(i) Silicon doped with electron-rich impurity is a p-type semiconductor.
(ii) Silicon doped with an electron-rich impurity is an n-type semiconductor.
(iii) Delocalised electrons increase the conductivity of doped silicon.
(iv) An electron vacancy increases the conductivity of n-type semiconductor.
Why does the electrical conductivity of semiconductors increase with rise in temperature?
Assertion: Semiconductors are solids with conductivities in the intermediate range from 10–6 – 104 ohm–1m–1.
Reason: Intermediate conductivity in semiconductor is due to partially filled valence band.
