मराठी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

The Conductivity of an Intrinsic Semiconductor Depends on Temperature as σ = σ0e−δE/2kt, Where σ0 is a Constant. - Physics

Advertisements
Advertisements

प्रश्न

The conductivity of an intrinsic semiconductor depends on temperature as σ = σ0eΔE/2kT, where σ0 is a constant. Find the temperature at which the conductivity of an intrinsic germanium semiconductor will be double of its value at T = 300 K. Assume that the gap for germanium is 0.650 eV and remains constant as the temperature is increased.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)

टीपा लिहा
Advertisements

उत्तर

Let the conductivity at temperature T1 be \[\sigma_1\]  and the conductivity at temperature T be \[\sigma_2\] .

Given: \[T_1    =   300  K\]

Band gap, E = 0.650 eV
Now,
According to the question,

\[\sigma =  \sigma_0 e -^\frac{\Delta E}{2KT}\]

\[\sigma_2    =   2 \sigma_1\]

\[\Rightarrow  \sigma_0  e^\frac{- \Delta E}{2kT}    =   2 \times  \sigma_0  e^\frac{- \Delta E}{2 \times k \times T_1} \] 

\[ \Rightarrow  \sigma_0  e^\frac{- \Delta E}{2kT}  =     2 \times  \sigma_0  e^\frac{- \Delta E}{2 \times k \times 300} \] 

\[ \Rightarrow  e^\frac{- 0 . 650}{2 \times 8 . 62 \times {10}^{- 5} \times T}    =   2 \times  e^\frac{- 0 . 650}{2 \times 8 . 62 \times {10}^{- 5} \times 300} \] 

\[ \Rightarrow  e^\frac{- 0 . 650}{2 \times 8 . 62 \times {10}^{- 5} \times T}    =   6 . 96561 \times  {10}^{- 6} \] 

On taking natural natural log on both sides, we get

\[\frac{- 0 . 650}{2 \times 8 . 62 \times {10}^{- 5} \times T}   =    - 11 . 874525\] 

\[ \Rightarrow \frac{1}{T}   =   \frac{11 . 874525 \times 2 \times 8 . 62 \times {10}^{- 5}}{0 . 65}\] 

\[ \Rightarrow T   =   317 . 51178   \approx   318\] K

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

APPEARS IN

एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
पाठ 23 Semiconductors and Semiconductor Devices
Exercises | Q 14 | पृष्ठ ४१९

संबंधित प्रश्‍न

When an electron goes from the valence band to the conduction band in silicon, its energy is increased by 1.1 eV. The average energy exchanged in a thermal collision is of the order of kT which is only 0.026 eV at room temperature. How is a thermal collision able to take some to the electrons from the valence band to the conduction band?


Electric conduction in a semiconductor takes place due to


An electric field is applied to a semiconductor. Let the number of charge carries be nand the average drift speed by v. If the temperature is increased,


Let np and ne be the number of holes and conduction electrons in an intrinsic semiconductor.


An incomplete sentence about transistors is given below:
The emitter−..... junction is __ and the collector−..... junction is __. The appropriate words for the dotted empty positions are, respectively,


In a pure semiconductor, the number of conduction election 6 × 1019 per cubic metre. How many holes are there in a sample of size 1 cm × 1 mm?


Find the maximum wavelength of electromagnetic radiation which can create a hole-electron pair in germanium. The band gap in germanium is 0.65 eV.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Let ΔE denote the energy gap between the valence band and the conduction band. The population of conduction electrons (and of the holes) is roughly proportional to eΔE/2kT. Find the ratio of the concentration of conduction electrons in diamond to the in silicon at room temperature 300 K. ΔE for silicon is 1.1 eV and for diamond is 6.1 eV. How many conduction electrons are likely to be in one cubic metre of diamond?


Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7 × 1015 holes per cubic metre. Density of silicon 5 × 1028 atoms per cubic metre.


The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6 × 1019 per cubic metref conduction electrons increases to 2 × 1023 per cubic metre. Find the concentration of the holes in the doped germanium.. When some phosphorus impurity is doped into a germanium sample, the concentration o


With reference to Semiconductor Physics,

Draw a labelled energy band diagram for a semiconductor.


What is forbidden band?


A semiconductor is cooled from T.K to T2K its resistance will


In a common base configuration Ie = 1 mA α = 0.95 the value of base current is


Three photo diodes D1, D2 and D3 are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV, respectively. Which 0 ones will be able to detect light of wavelength 6000 Å?


Draw the energy band diagrams for conductors, semiconductors and insulators. Which band determines the electrical conductivity of a solid? How is the electrical conductivity of a semiconductor affected with rise in its temperature? Explain.


  • Assertion (A): In insulators, the forbidden gap is very large.
  • Reason (R): The valence electrons in an atom of an insulator are very tightly bound to the nucleus.

Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×