What is the wavelength of a beam of neutron having:

⦁ An energy of 0.025 eV?

⦁ An electron and photon each have wavelength of 2A°. what are their momentum and energy ? m_{n} = 1.676×10^{-27 }kg, h = 6.625×10^{-34 }J-sec.

Concept: De Broglie Wavelength

Arrive at Heisenberg’s uncertainty principle with single slit electron diffraction. An electron has a speed of 300n/sec with uncertainty of 0.01 %. Find the accuracy in its position.

Concept: Heisenberg’S Uncertainty Principle

With Heisenberg’s uncertainty principle prove that electron cannot survive in nucleus. An electron has a speed of 300m/sec. with uncertainty of 0.01% . find the accuracy in its position.

Concept: Heisenberg’S Uncertainty Principle

State properties of matter waves.

Concept: Properties of Matter Waves

State Heisenberg's Uncertainty Principle. Show that electron doesn'texist in

the nucleus.Find the accuracy in the position of an electron moving with speed 350

m/sec with uncertainty of 0.01%.

Concept: Introduction to Quantum Mechanics

For an electron passing through potential difference V, show that its

wavelength is;

λ = 12.26/√V A°.

Concept: De Broglie Wavelength

Show that group velocity of matter waves associated with a particle is equal to

the particle velocity(V_{group}=V_{particle})

Concept: Phase Velocity and Group Velocity

Explain the principle, construction and working of Light Emitting Diode.

Concept: Applications of Uncertainty Principle

Draw the I-V characteristics of a photo -diode. What is meant by dark current?

Concept: Applications of semiconductors : Rectifier diode, LED, Zener diode, Photo diode, Photovoltaic cell, BJT, FET, SCR., MOSFET

Define super conductivity and critical temperature. Plot the variation of resistance versus temperature in case of superconducting state of the material.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

Define the term drift current and mobility of a charge carriers. Calculate the current product in a germanium sample of area of cross section 1 cm^{2 }and thickness of 0.01 m, when a potential difference of 2V is applied cross it. Given :- the concentration of free electron in germanium is 2×10^{19 }/m^{3 } and mobilities of electrons and holes are 0.36 m^{2 }/volts sec and 0.17 m^{2 }/volts sec respectively.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

State application of Hall effect. In a Hall effect experiment a potential difference of 4.5 μV is developed across a foil of zinc of thickness 0.02mm when a current of 1.5 A is carrying in a direction perpendicular to applied magnetic field of 2 tesla. Calculate :-

• Hall coefficient for zinc.

• Concentration of electron.

Concept: Hall Effect

How does the position of fermi energy level changes with increasing doping concentration in p-type semi-conductor ? sketch diagram.

Concept: Fermi Energy Level in Intrinsic Semiconductors

Find the minimum energy of neutron confined to a nucleus of size of the order of 10^{-14}m. Given mass of neutron = 1.675×10^{-27}kg

Concept: Fermi Energy Level in Intrinsic Semiconductors

The mobility of holes is 0.025m^{2 }/V-sec. what would be the resistivity of n- type Si if the Hall coefficient of the sample is 2.25× 10^{-5}m^{3}/C.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

Explain the concept of fermi level. Prove that the Fermi level exactly at the centre of the Forbidden energy gap in intrinsic semiconductor.

Concept: Fermi Energy Level in Intrinsic Semiconductors

Define drift current, diffusion current and P-N junction. The electrical conductivity of a pure silicon at room temperature is 4×10^{-4 }mho/m . if the mobility of electron is 0.14m^{2 }/V-S and that of hole is 0.04m^{2 }/V-S. calculate the intrinsic

carrier density.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

Distinguish between Type I and Type II superconductor.

Concept: Applications of semiconductors : Rectifier diode, LED, Zener diode, Photo diode, Photovoltaic cell, BJT, FET, SCR., MOSFET

Write Fermi Dirac distribution function. With the help of diagram. Explain the variation of Fermi level with temperature in n-type semiconductor.

Concept: Fermi Dirac Distribution Function

Find the depth of sea water from a ship on the sea surface it the time interval of two seconds is required to receive the signal back. Given that: temperature of sea water is 20℃, salinity of sea water is 10gm/lit.

Concept: Effect of Temperature on Fermi Level

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