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# Applied Physics 1 CBCGS 2016-2017 BE Electronics Engineering Semester 1 (FE First Year) Question Paper Solution

SubjectApplied Physics 1
Year2016 - 2017 (June)
Applied Physics 1
CBCGS
2016-2017 June
Marks: 60

1
1.a

Draw the unit cell of HCP structure and work out the no. of atoms per unit cell.

Chapter:  Crystal Structure
Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;
1.b

The mobility of holes is 0.025m2 /V-sec. what would be the resistivity of n- type Si if the Hall coefficient of the sample is 2.25× 10-5m3/C.

Chapter:  Semiconductor Physics
Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)
1.c

What is the principle of solar cell? Write its advantages and disadvantages

Chapter:  Crystal Structure
Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;
1.d

An electron is confined in a box of dimension 1A°. calculate minimum uncertainty in its velocity.

Chapter:  Quantum Mechanics
Concept: Applications of Uncertainty Principle
1.e

Explain the factors on which reverberation time depends .

Chapter:  Acoustics
Concept: Reflection of Sound(Reverberation and Echo)
1.f

Explain cavitation effect.

Chapter:  Ultrasonics
Concept: ultrasonic cleaning(cavitation)
1.g

What is Maglev? How it can have very high speed?

Chapter:  Superconductivity
Concept: Applications of superconductors- SQUID, MAGLEV
2
2.a

Draw the following : (1,-1,3) ,(2,0,0) , [0,0,-1]
An electron is accelerated through 1200 volts and is reflected from a crystal. The second order reflection occurs when glancing angle is 60°. Calculate the inter planar spacing of the crystal.

Chapter:  Crystal Structure
Concept: Introduction to Crystallography
2.b

Explain the concept of fermi level. Prove that the Fermi level exactly at the centre of the Forbidden energy gap in intrinsic semiconductor.

Chapter:  Semiconductor Physics
Concept: Fermi Energy Level in Intrinsic Semiconductors
3
3.a

Find the following parameter for DC(Diamond Cubic) structure:-
⦁ No. of atoms per unit cell.
⦁ Co-ordination number.
⦁ Nearest atomic distance.
⦁ APF.

Chapter:  Crystal Structure
Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;
3.b

Define drift current, diffusion current and P-N junction. The electrical conductivity of a pure silicon at room temperature is 4×10-4 mho/m . if the mobility of electron is 0.14m2 /V-S and that of hole is 0.04m2 /V-S. calculate the intrinsic
carrier density.

Chapter:  Semiconductor Physics
Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)
4
4.a

Distinguish between Type I and Type II superconductor.

Chapter:  Semiconductor Physics
Concept: Applications of semiconductors : Rectifier diode, LED, Zener diode, Photo diode, Photovoltaic cell, BJT, FET, SCR., MOSFET
4.b

A classroom has dimension 10×8×6m3. the reverberation time is 3 sec. calculate the total absorption of surface and average absorption.

Chapter:  Acoustics
Concept: Reflection of Sound(Reverberation and Echo)
4.c

Explain the principle, construction and working of a Magnetostriction Oscillator.

Chapter:  Ultrasonics
Concept: Magnetostriction Oscillator
5
5.a

Write Fermi Dirac distribution function. With the help of diagram. Explain the variation of Fermi level with temperature in n-type semiconductor.

Chapter:  Semiconductor Physics
Concept: Fermi Dirac Distribution Function
5.b

Derive Schrodinger time dependent wave equation for matter waves.

Chapter:  Quantum Mechanics
Concept: Schrodinger’S Time Dependent Wave Equation
5.c

Find the depth of sea water from a ship on the sea surface it the time interval of two seconds is required to receive the signal back. Given that: temperature of sea water is 20℃, salinity of sea water is 10gm/lit.

Chapter:  Semiconductor Physics
Concept: Effect of Temperature on Fermi Level
6
6.a

Define the critical temperature. Slow that in the superconducting state the material is perfectly diamagnetic.

Chapter:  Superconductivity
Concept: Meissner Effect
6.b

In a solid the energy level is lying 0.012 eV below Fermi level. What is the probability of this level not being occupied by an electron 27℃?

Chapter:  Semiconductor Physics
Concept: Fermi Energy Level in Intrinsic Semiconductors
6.c

What is the wavelength of a beam of neutron having:
⦁ An energy of 0.025 eV?
⦁ An electron and photon each have wavelength of 2A°. what are their momentum and energy ? mn = 1.676×10 -27 kg, h = 6.625×10 -34 J-sec.

Chapter:  Quantum Mechanics
Concept: De Broglie Wavelength

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