2016-2017 June

Draw the unit cell of HCP structure and work out the no. of atoms per unit cell.

Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;

The mobility of holes is 0.025m^{2 }/V-sec. what would be the resistivity of n- type Si if the Hall coefficient of the sample is 2.25× 10^{-5}m^{3}/C.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

What is the principle of solar cell? Write its advantages and disadvantages

Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;

An electron is confined in a box of dimension 1A°. calculate minimum uncertainty in its velocity.

Concept: Applications of Uncertainty Principle

Explain the factors on which reverberation time depends .

Concept: Reflection of Sound(Reverberation and Echo)

Explain cavitation effect.

Concept: ultrasonic cleaning(cavitation)

What is Maglev? How it can have very high speed?

Concept: Applications of superconductors- SQUID, MAGLEV

Draw the following : (1,-1,3) ,(2,0,0) , [0,0,-1]

An electron is accelerated through 1200 volts and is reflected from a crystal. The second order reflection occurs when glancing angle is 60°. Calculate the inter planar spacing of the crystal.

Concept: Introduction to Crystallography

Explain the concept of fermi level. Prove that the Fermi level exactly at the centre of the Forbidden energy gap in intrinsic semiconductor.

Concept: Fermi Energy Level in Intrinsic Semiconductors

Find the following parameter for DC(Diamond Cubic) structure:-

⦁ No. of atoms per unit cell.

⦁ Co-ordination number.

⦁ Nearest atomic distance.

⦁ Atomic radius.

⦁ APF.

Concept: Study of characteristics of unit cell of Diamond, ZnS, NaCl and HCP;

Define drift current, diffusion current and P-N junction. The electrical conductivity of a pure silicon at room temperature is 4×10^{-4 }mho/m . if the mobility of electron is 0.14m^{2 }/V-S and that of hole is 0.04m^{2 }/V-S. calculate the intrinsic

carrier density.

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

Distinguish between Type I and Type II superconductor.

Concept: Applications of semiconductors : Rectifier diode, LED, Zener diode, Photo diode, Photovoltaic cell, BJT, FET, SCR., MOSFET

A classroom has dimension 10×8×6m^{3}. the reverberation time is 3 sec. calculate the total absorption of surface and average absorption.

Concept: Reflection of Sound(Reverberation and Echo)

Explain the principle, construction and working of a Magnetostriction Oscillator.

Concept: Magnetostriction Oscillator

Write Fermi Dirac distribution function. With the help of diagram. Explain the variation of Fermi level with temperature in n-type semiconductor.

Concept: Fermi Dirac Distribution Function

Derive Schrodinger time dependent wave equation for matter waves.

Concept: Schrodinger’S Time Dependent Wave Equation

Find the depth of sea water from a ship on the sea surface it the time interval of two seconds is required to receive the signal back. Given that: temperature of sea water is 20℃, salinity of sea water is 10gm/lit.

Concept: Effect of Temperature on Fermi Level

Define the critical temperature. Slow that in the superconducting state the material is perfectly diamagnetic.

Concept: Meissner Effect

In a solid the energy level is lying 0.012 eV below Fermi level. What is the probability of this level not being occupied by an electron 27℃?

Concept: Fermi Energy Level in Intrinsic Semiconductors

What is the wavelength of a beam of neutron having:

⦁ An energy of 0.025 eV?

⦁ An electron and photon each have wavelength of 2A°. what are their momentum and energy ? m_{n} = 1.676×10^{-27 }kg, h = 6.625×10^{-34 }J-sec.

Concept: De Broglie Wavelength

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