In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. - Physics

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Numerical

In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by

`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`

where nis a constant.

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Solution

Energy gap of the given intrinsic semiconductor, Eg = 1.2 eV

The temperature dependence of the intrinsic carrier-concentration is written as:

`"n"_"i" = "n"_0 exp [- "E"/(2"k"_"BT")]`

Where,

kB = Boltzmann constant = 8.62 × 10−5 eV/K

T = Temperature

n0 = Constant

Initial temperature, T1 = 300 K

The intrinsic carrier-concentration at this temperature can be written as:

`"n"_("i"1) = "n"_0 exp[- "E"_"g"/(2"k"_"B" xx 300)]` ....(1)

Final temperature, T2 = 600 K

The intrinsic carrier-concentration at this temperature can be written as:

`"n"_("i"2) = "n"_0 exp[- "E"_"g"/(2"k"_"B" xx 600)]` ....(2)

The ratio between the conductivities at 600 K and at 300 K is equal to the ratio between the respective intrinsic carrier-concentrations at these temperatures.

`"n"_("i"2)/"n"_("i"1) = ("n"_0  exp [- "E"_"g"/(2"k"_"B" 600)])/["n"_0 exp ["E"_"g"/(2"k"_"B" 300)]]`

`= exp "E"_"g"/(2"k"_"B") [1/300 - 1/600] = exp [1.2/(2xx 8.62  xx 20^(-5)) xx (2-1)/600]`

`= exp[11.6] = 1.09 xx 10^5`

Therefore, the ratio between the conductivities is 1.09 × 105.

Concept: Intrinsic Semiconductor
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Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits - Exercise [Page 498]

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NCERT Physics Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 14.9 | Page 498
NCERT Physics Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 13 | Page 510

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