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How does the position of fermi energy level changes with increasing doping concentration in p-type semi-conductor ? sketch diagram. - Applied Physics 1

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Short Note

How does the position of fermi energy level changes with increasing doping concentration in p-type semi-conductor ? sketch diagram.

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Solution

This type of break down occurs when a high reverse voltage is applied to a lightly doped junction diode as shown. In this case , the minority electron of the p side acquire high kinetic energy with which they knock out the valence electrons of the host atoms producing electron- hole pairs. These electron hole pairs gain kinetic energy from the electric field and in turn produce more and more electron pairs. This is called avalanche multiplication which occurs in a very short time to give large reverse current.

Concept: Fermi Energy Level in Intrinsic Semiconductors
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