Definition

Calculate electron & hole concentration in intrinsic Si at room temperature if

its electrical conductivity is 4x10-4 mho/m.Given that mobility of electron=

0.14m2/V-sec and mobility of holes=0.04m2/V-sec.

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#### Solution

Data: μe=0.14m^{2}/V-sec,μh=0.040m^{2}/V-sec,σ=4×10^{-4}mho/m

Formula:σi= ni(μe+μh).e

Calculations: ni=σi/e(μe+μh)

=4×10^{-4}/1.6×10^{-19}(0.14+0.040)

= ni=1.388×10^{16}/m^{3}

Answer: Carrier concentration=1.388×10^{16}/m^{3}

Concept: Conductivity, mobility, current density (drift & diffusion) in semiconductors(n type and p type)

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