Show that fermi energy level in intrinsic semiconductor is at the Centre of forbidden energy gap. What is the probability of an electron being thermally excited to the conduction band in Si at 30℃. The band gap energy is 1.12 eV.
Explain the concept of fermi level. Prove that the Fermi level exactly at the centre of the Forbidden energy gap in intrinsic semiconductor.
How does the position of fermi energy level changes with increasing doping concentration in p-type semi-conductor ? sketch diagram.
Find the minimum energy of neutron confined to a nucleus of size of the order of 10-14m. Given mass of neutron = 1.675×10-27kg
In a solid the energy level is lying 0.012 eV below Fermi level. What is the probability of this level not being occupied by an electron 27℃?