Define super conductivity and critical temperature. Plot the variation of resistance versus temperature in case of superconducting state of the material.
Define the term drift current and mobility of a charge carriers. Calculate the current product in a germanium sample of area of cross section 1 cm2 and thickness of 0.01 m, when a potential difference of 2V is applied cross it. Given :- the concentration of free electron in germanium is 2×1019 /m3 and mobilities of electrons and holes are 0.36 m2 /volts sec and 0.17 m2 /volts sec respectively.
The mobility of holes is 0.025m2 /V-sec. what would be the resistivity of n- type Si if the Hall coefficient of the sample is 2.25× 10-5m3/C.
Define drift current, diffusion current and P-N junction. The electrical conductivity of a pure silicon at room temperature is 4×10-4 mho/m . if the mobility of electron is 0.14m2 /V-S and that of hole is 0.04m2 /V-S. calculate the intrinsic
Mobility of electron and hole in a sample of Ge at room temperature are 0.36 m2 /V-sec and 0.17m2 /V-sec respectively. If electron and holes densities are equal and it is 2.5 ×1013 /cm3 , calculate its conductivity.
Calculate electron & hole concentration in intrinsic Si at room temperature if
its electrical conductivity is 4x10-4 mho/m.Given that mobility of electron=
0.14m2/V-sec and mobility of holes=0.04m2/V-sec.